Modeling Gate Oxide Short Defects in CMOS Minimum Transistors
نویسندگان
چکیده
In this paper a new model is proposed for Gate Oxide Short defects based on a non-split MOS transistor. Because the MOS is not split, this model allows to simulate minimum transistors in realistic digital circuits. The construction of the model is presented in details using a comprehensive and didactic approach. It is demonstrated that the electrical behavior of the proposed model perfectly matches with the defective transistor behavior.
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